MOSFET P-CH 20V 5.3A 6TSOP | Vishay Siliconix
P-Channel 20 V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
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Available: 312 pcs.
Next delivery: 5502 pcs.
Manufacturer Leadtime: **
Description
The SI3495DV-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant SOT-23-6 Thin, TSOT-23-6 package by Vishay Siliconix made. The SI3495DV-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Vishay Siliconix |
Series | TrenchFET |
Package | Tape & Reel (TR) |
Product Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 24mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id | 750mV @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 4.5 V |
Vgs (Max) | ±5V |
FET Feature | - |
Power Dissipation (Max) | 1.1W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSOP |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Base Product Number | SI3495 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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SI3495DV-T1-GE3 ECAD module
SI3495DV-T1-GE3 datesheet
SI3495DV-T1-GE3 specification
SI3495DV-T1-GE3 certificate
SI3495DV-T1-GE3 component
SI3495DV-T1-GE3 substitute
SI3495DV-T1-GE3 packaging