MOSFET N-CH 200V 88A D2PAK | Infineon Technologies
N-Channel 200 V 88A (Tc) 300W (Tc) Surface Mount PG-TO263-3
Images may differ
Unit Price ($ / pc.)
2.67614 $
*
Available: 328 pcs.
Next delivery: 5838 pcs.
Manufacturer Leadtime: 26 Weeks **
Description
The IPB107N20NAATMA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package by Infineon Technologies made. The IPB107N20NAATMA1 is using SPQ 1000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Infineon Technologies |
Series | OptiMOS |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V |
Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 10.7mOhm @ 88A, 10V |
Vgs(th) (Max) @ Id | 4V @ 270μA |
Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7100 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3 |
Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Base Product Number | IPB107 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 1000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
Search
IPB107N20NAATMA1 ECAD module
IPB107N20NAATMA1 datesheet
IPB107N20NAATMA1 specification
IPB107N20NAATMA1 certificate
IPB107N20NAATMA1 supplier
IPB107N20NAATMA1 component
IPB107N20NAATMA1 substitute
IPB107N20NAATMA1 packaging