MOSFET N-CH 600V 15.8A TO3P | Toshiba Semiconductor and Storage

N-Channel 600 V 15.8A (Ta) 130W (Tc) Through Hole TO-3P(N)

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Available: 434 pcs.
Next delivery: 8064 pcs.
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Manufacturer Leadtime: **
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Description

The TK16J60W,S1VQ is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-3P-3, SC-65-3 package by Toshiba Semiconductor and Storage made. The TK16J60W,S1VQ is using SPQ 25 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrToshiba Semiconductor and Storage
SeriesDTMOSIV
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id3.7V @ 790μA
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1350 pF @ 300 V
FET Feature-
Power Dissipation (Max)130W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P(N)
Package / CaseTO-3P-3, SC-65-3
Base Product NumberTK16J60
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 25 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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