MOSFET P-CH 30V 50A PPAK 1212-8S | Vishay Siliconix
P-Channel 30 V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK 1212-8S
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Unit Price ($ / pc.)
0.133315 $
*
Available: 464 pcs.
Next delivery: 8694 pcs.
Manufacturer Leadtime: 11 Weeks **
Description
The SISS27DN-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant PowerPAK 1212-8S package by Vishay Siliconix made. The SISS27DN-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Vishay Siliconix |
Series | TrenchFET |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 5.6mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5250 pF @ 15 V |
FET Feature | - |
Power Dissipation (Max) | 4.8W (Ta), 57W (Tc) |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8S |
Package / Case | PowerPAK 1212-8S |
Base Product Number | SISS27 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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SISS27DN-T1-GE3 datesheet
SISS27DN-T1-GE3 specification
SISS27DN-T1-GE3 certificate
SISS27DN-T1-GE3 component
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SISS27DN-T1-GE3 packaging