MOSFET N-CH 650V 28A TO220AB | Vishay Siliconix
N-Channel 650 V 28A (Tc) 250W (Tc) Through Hole TO-220AB
Images may differ
Unit Price ($ / pc.)
1.605785 $
*
Available: 650 pcs.
Next delivery: 12600 pcs.
Manufacturer Leadtime: 21 Weeks **
Description
The SIHP28N65EF-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Vishay Siliconix made. The SIHP28N65EF-GE3 is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Vishay Siliconix |
Series | - |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 117mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 146 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 3249 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Base Product Number | SIHP28 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 50 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
Search
SIHP28N65EF-GE3 ECAD module
SIHP28N65EF-GE3 datesheet
SIHP28N65EF-GE3 specification
SIHP28N65EF-GE3 certificate
SIHP28N65EF-GE3 component
SIHP28N65EF-GE3 substitute
SIHP28N65EF-GE3 packaging