POWER MOSFET | STMicroelectronics

N-Channel 650 V 8A (Tc) 85W (Tc) Through Hole TO-220

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Unit Price ($ / pc.)
0.46457 $ *
Available: 663 pcs.
Next delivery: 12873 pcs.
Available in 6 Weeks
Manufacturer Leadtime: 99 Weeks **
Quantity
Price per unit*
100 pcs.
0.441342 $
500 pcs.
0.418113 $
1000 pcs.
0.394885 $
3000 pcs.
0.371656 $
10000 pcs.
0.348428 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The STP12N65M2 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by STMicroelectronics made. The STP12N65M2 is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrSTMicroelectronics
SeriesMDmesh DM2
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)0V, 10V
Rds On (Max) @ Id, Vgs500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs16.7 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds535 pF @ 100 V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberSTP12
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 50 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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