SICFET N-CH 1200V 80A TO247 | Microsemi Corporation

N-Channel 1200 V 80A (Tc) 555W (Tc) Through Hole TO-247

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Unit Price ($ / pc.)
$ *
Available: 665 pcs.
Next delivery: 12915 pcs.
Available in 6 Weeks
Manufacturer Leadtime: **
Quantity
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Description

The APT80SM120B is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-247-3 package by Microsemi Corporation made. The APT80SM120B is using SPQ 1 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrMicrosemi Corporation
Series-
PackageBulk
Product StatusObsolete
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs55mOhm @ 40A, 20V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs235 nC @ 20 V
Vgs (Max)+25V, -10V
FET Feature-
Power Dissipation (Max)555W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 1 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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