SICFET N-CH 1200V 80A TO247 | Microsemi Corporation
N-Channel 1200 V 80A (Tc) 555W (Tc) Through Hole TO-247
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Available: 665 pcs.
Next delivery: 12915 pcs.
Manufacturer Leadtime: **
Description
The APT80SM120B is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-247-3 package by Microsemi Corporation made. The APT80SM120B is using SPQ 1 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Microsemi Corporation |
Series | - |
Package | Bulk |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 55mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 235 nC @ 20 V |
Vgs (Max) | +25V, -10V |
FET Feature | - |
Power Dissipation (Max) | 555W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 1 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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APT80SM120B specification