MOSFET N-CH 12V 1.6A 4DSBGA | Texas Instruments
N-Channel 12 V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)
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Unit Price ($ / pc.)
0.175625 $
*
Available: 707 pcs.
Next delivery: 13797 pcs.
Available in 6 Weeks
Manufacturer Leadtime: 6 Weeks **
Quantity
Price per unit*
100 pcs.
0.166844 $
500 pcs.
0.158063 $
1000 pcs.
0.149281 $
3000 pcs.
0.1405 $
10000 pcs.
0.131719 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The CSD13302WT is a common industry Single FETs, MOSFETs housed in a RoHS compliant 4-UFBGA, DSBGA package by Texas Instruments made. The CSD13302WT is using SPQ 250 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Texas Instruments |
| Series | NexFET |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 17.1mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 4.5 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 862 pF @ 6 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-DSBGA (1x1) |
| Package / Case | 4-UFBGA, DSBGA |
| Base Product Number | CSD13302 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 250 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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