MOSFET N-CH 20V 2.9A SOT23-3 | Vishay Siliconix
N-Channel 20 V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)
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Unit Price ($ / pc.)
0.05113 $
*
Available: 709 pcs.
Next delivery: 13839 pcs.
Available in 6 Weeks
Manufacturer Leadtime: 18 Weeks **
Quantity
Price per unit*
100 pcs.
0.048574 $
500 pcs.
0.046017 $
1000 pcs.
0.043461 $
3000 pcs.
0.040904 $
10000 pcs.
0.038348 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SI2302DDS-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-236-3, SC-59, SOT-23-3 package by Vishay Siliconix made. The SI2302DDS-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | TrenchFET |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 3.6A, 4.5V |
| Vgs(th) (Max) @ Id | 850mV @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 710mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SI2302 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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