MOSFET N-CH 600V 29A TO220 | Vishay Siliconix
N-Channel 600 V 29A (Tc) 37W (Tc) Through Hole
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Unit Price ($ / pc.)
1.43319 $
*
Available: 709 pcs.
Next delivery: 13839 pcs.
Manufacturer Leadtime: 28 Weeks **
Description
The SIHF30N60E-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 Full Pack package by Vishay Siliconix made. The SIHF30N60E-GE3 is using SPQ 1 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Vishay Siliconix |
Series | E |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 125mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 37W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Base Product Number | SIHF30 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 1 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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