MOSFET N-CH 600V 29A PPAK 8 X 8 | Vishay Siliconix
N-Channel 600 V 29A (Tc) 202W (Tc) Surface Mount PowerPAK 8 x 8
Images may differ
Unit Price ($ / pc.)
1.494425 $
*
Available: 718 pcs.
Next delivery: 14028 pcs.
Manufacturer Leadtime: 28 Weeks **
Description
The SIHH28N60E-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-PowerTDFN package by Vishay Siliconix made. The SIHH28N60E-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Vishay Siliconix |
Series | E |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 98mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 129 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2614 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 202W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 8 x 8 |
Package / Case | 8-PowerTDFN |
Base Product Number | SIHH28 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
Search
SIHH28N60E-T1-GE3 ECAD module
SIHH28N60E-T1-GE3 datesheet
SIHH28N60E-T1-GE3 specification
SIHH28N60E-T1-GE3 certificate
SIHH28N60E-T1-GE3 supplier
SIHH28N60E-T1-GE3 component
SIHH28N60E-T1-GE3 substitute
SIHH28N60E-T1-GE3 packaging
SIHH28N60E-T1-GE3 sources