MOSFET N-CH 800V 6.5A TO220 | Toshiba Semiconductor and Storage

N-Channel 800 V 6.5A (Ta) 110W (Tc) Through Hole TO-220

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Unit Price ($ / pc.)
0.639375 $ *
Available: 719 pcs.
Next delivery: 14049 pcs.
Available in 6 Weeks
Manufacturer Leadtime: 24 Weeks **
Quantity
Price per unit*
100 pcs.
0.607406 $
500 pcs.
0.575438 $
1000 pcs.
0.543469 $
3000 pcs.
0.5115 $
10000 pcs.
0.479531 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The TK7E80W,S1X is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Toshiba Semiconductor and Storage made. The TK7E80W,S1X is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrToshiba Semiconductor and Storage
SeriesDTMOSIV
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs950mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id4V @ 280μA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 300 V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature150°C
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberTK7E80
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 50 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes