MOSFET N-CH 700V 10.1A TO251-3 | Infineon Technologies

N-Channel 700 V 10.1A (Tc) 86W (Tc) Through Hole PG-TO251-3

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Available: 782 pcs.
Next delivery: 15372 pcs.
Available in 7 Weeks
Manufacturer Leadtime: **
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Description

The IPS65R650CEAKMA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-251-3 Short Leads, IPak, TO-251AA package by Infineon Technologies made. The IPS65R650CEAKMA1 is using SPQ 1500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrInfineon Technologies
Series-
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)700 V
Current - Continuous Drain (Id) @ 25°C10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id3.5V @ 210μA
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 100 V
FET Feature-
Power Dissipation (Max)86W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Base Product NumberIPS65R650
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 1500 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes