MOSFET N-CH 800V 12A TO220AB | Vishay Siliconix
N-Channel 800 V 12A (Tc) 179W (Tc) Through Hole TO-220AB
Images may differ 
Unit Price ($ / pc.)
0.793125 $
*
Available: 791 pcs.
Next delivery: 15561 pcs.
Available in 7 Weeks
Manufacturer Leadtime: 21 Weeks **
Quantity
Price per unit*
100 pcs.
0.753469 $
500 pcs.
0.713813 $
1000 pcs.
0.674156 $
3000 pcs.
0.6345 $
10000 pcs.
0.594844 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SIHP11N80E-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Vishay Siliconix made. The SIHP11N80E-GE3 is using SPQ 1000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | E |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 179W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Base Product Number | SIHP11 |
Download
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 1000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
Search