MOSFET P-CH 30V 12.6A 8SOIC | Vishay Siliconix
P-Channel 30 V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC
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Unit Price ($ / pc.)
0.0505 $
*
Available: 806 pcs.
Next delivery: 15876 pcs.
Available in 7 Weeks
Manufacturer Leadtime: 18 Weeks **
Quantity
Price per unit*
100 pcs.
0.047975 $
500 pcs.
0.04545 $
1000 pcs.
0.042925 $
3000 pcs.
0.0404 $
10000 pcs.
0.037875 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SI4435FDY-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-SOIC (0.154", 3.90mm Width) package by Vishay Siliconix made. The SI4435FDY-T1-GE3 is using SPQ 2500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | TrenchFET Gen III |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 12.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | SI4435 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 2500 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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