MOSFET N-CH 80V 53.7A PWRDI5060 | Diodes Incorporated
N-Channel 80 V 53.7A (Tc) 3.1W (Ta) Surface Mount PowerDI5060-8 (Type Q)
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Unit Price ($ / pc.)
0.15344 $
*
Available: 816 pcs.
Next delivery: 16086 pcs.
Available in 7 Weeks
Manufacturer Leadtime: 8 Weeks **
Quantity
Price per unit*
100 pcs.
0.145768 $
500 pcs.
0.138096 $
1000 pcs.
0.130424 $
3000 pcs.
0.122752 $
10000 pcs.
0.11508 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The DMTH8012LPSW-13 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-PowerTDFN package by Diodes Incorporated made. The DMTH8012LPSW-13 is using SPQ 2500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Diodes Incorporated |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 53.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1949 pF @ 40 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerDI5060-8 (Type Q) |
| Package / Case | 8-PowerTDFN |
| Base Product Number | DMTH8012 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 2500 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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