MOSFET N-CH 650V 9A TO220AB | Diodes Incorporated

N-Channel 650 V 9A (Tc) 165W (Tc) Through Hole TO-220-3

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Unit Price ($ / pc.)
0.592 $ *
Available: 822 pcs.
Next delivery: 16212 pcs.
Available in 7 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.5624 $
500 pcs.
0.5328 $
1000 pcs.
0.5032 $
3000 pcs.
0.4736 $
10000 pcs.
0.444 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The DMG9N65CT is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Diodes Incorporated made. The DMG9N65CT is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrDiodes Incorporated
Series-
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2310 pF @ 25 V
FET Feature-
Power Dissipation (Max)165W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
Base Product NumberDMG9
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 50 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes