MOSFET N-CH 650V 4A ITO220AB | Diodes Incorporated
N-Channel 650 V 4A (Tc) 8.35W (Ta) Through Hole ITO-220AB
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Unit Price ($ / pc.)
$
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Available: 853 pcs.
Next delivery: 16863 pcs.
Available in 8 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
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3000 pcs.
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**Subject to prior sale
Description
The DMG4N65CTI is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 Full Pack, Isolated Tab package by Diodes Incorporated made. The DMG4N65CTI is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Diodes Incorporated |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 8.35W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | ITO-220AB |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Base Product Number | DMG4 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 50 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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