MOSFET N-CH 800V 1.9A SOT223 | Infineon Technologies
N-Channel 800 V 1.9A (Tc) 6.1W (Tc) Surface Mount PG-SOT223
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Unit Price ($ / pc.)
0.122565 $
*
Available: 863 pcs.
Next delivery: 17073 pcs.
Available in 8 Weeks
Manufacturer Leadtime: 20 Weeks **
Quantity
Price per unit*
100 pcs.
0.116437 $
500 pcs.
0.110309 $
1000 pcs.
0.10418 $
3000 pcs.
0.098052 $
10000 pcs.
0.091924 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IPN80R3K3P7ATMA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-261-4, TO-261AA package by Infineon Technologies made. The IPN80R3K3P7ATMA1 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | CoolMOS P7 |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 590mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 30μA |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 500 V |
| FET Feature | - |
| Power Dissipation (Max) | 6.1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223 |
| Package / Case | TO-261-4, TO-261AA |
| Base Product Number | IPN80R3 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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