MOSFET N-CH 650V 7.2A TO251-3 | Infineon Technologies
N-Channel 650 V 7.2A (Tc) 68W (Tc) Through Hole PG-TO251-3-342
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Unit Price ($ / pc.)
0.18067 $
*
Available: 863 pcs.
Next delivery: 17073 pcs.
Available in 8 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.171637 $
500 pcs.
0.162603 $
1000 pcs.
0.15357 $
3000 pcs.
0.144536 $
10000 pcs.
0.135503 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IPS65R1K0CEAKMA2 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-251-3 Stub Leads, IPak package by Infineon Technologies made. The IPS65R1K0CEAKMA2 is using SPQ 1500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | CoolMOS CE |
| Package | Tube |
| Product Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 200μA |
| Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 328 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3-342 |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Base Product Number | IPS65R1 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 1500 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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