MOSFET N-CH 200V 8.9A/39.6A PPAK | Vishay Siliconix
N-Channel 200 V 8.9A (Ta), 39.6A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK SO-8DC
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Unit Price ($ / pc.)
0.767815 $
*
Available: 996 pcs.
Next delivery: 19866 pcs.
Available in 9 Weeks
Manufacturer Leadtime: 62 Weeks **
Quantity
Price per unit*
100 pcs.
0.729424 $
500 pcs.
0.691034 $
1000 pcs.
0.652643 $
3000 pcs.
0.614252 $
10000 pcs.
0.575861 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SIDR610DP-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant PowerPAK SO-8 package by Vishay Siliconix made. The SIDR610DP-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | TrenchFET |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta), 39.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Rds On (Max) @ Id, Vgs | 31.9mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK SO-8DC |
| Package / Case | PowerPAK SO-8 |
| Base Product Number | SIDR610 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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