MOSFET N-CH 20V 12.5A PPAK | Vishay Siliconix
N-Channel 20 V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK 1212-8SH
Images may differ
Unit Price ($ / pc.)
0.310595 $
*
Available: 1009 pcs.
Next delivery: 20139 pcs.
Manufacturer Leadtime: 18 Weeks **
Description
The SISH106DN-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant PowerPAK 1212-8SH package by Vishay Siliconix made. The SISH106DN-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Vishay Siliconix |
Series | TrenchFET |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 6.2mOhm @ 19.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8SH |
Package / Case | PowerPAK 1212-8SH |
Base Product Number | SISH106 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
Search
SISH106DN-T1-GE3 ECAD module
SISH106DN-T1-GE3 datesheet
SISH106DN-T1-GE3 specification
SISH106DN-T1-GE3 certificate
SISH106DN-T1-GE3 supplier
SISH106DN-T1-GE3 component
SISH106DN-T1-GE3 substitute
SISH106DN-T1-GE3 packaging