SICFET N-CH 1200V 204A MODULE | Rohm Semiconductor

N-Channel 1200 V 204A (Tc) 1360W (Tc) Chassis Mount Module

default L
Images may differ 
Unit Price ($ / pc.)
310.272085 $ *
Available: 1024 pcs.
Next delivery: 20454 pcs.
Available in 9 Weeks
Manufacturer Leadtime: 17 Weeks **
Quantity
Price per unit*
100 pcs.
294.758481 $
500 pcs.
279.244877 $
1000 pcs.
263.731272 $
3000 pcs.
248.217668 $
10000 pcs.
232.704064 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The BSM180C12P2E202 is a common industry Single FETs, MOSFETs housed in a RoHS compliant Module package by Rohm Semiconductor made. The BSM180C12P2E202 is using SPQ 4 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrRohm Semiconductor
Series-
PackageTray
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C204A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id4V @ 35.2mA
Vgs (Max)+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds20000 pF @ 10 V
FET Feature-
Power Dissipation (Max)1360W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageModule
Package / CaseModule
Base Product NumberBSM180
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 4 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
Previous
FDMC4436BZ