SICFET N-CH 1200V 600A MODULE | Rohm Semiconductor

N-Channel 1200 V 600A (Tc) 2460W (Tc) Chassis Mount Module

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Unit Price ($ / pc.)
125.3925 $ *
Available: 1024 pcs.
Next delivery: 20454 pcs.
Available in 9 Weeks
Manufacturer Leadtime: 19 Weeks **
Quantity
Price per unit*
100 pcs.
119.122875 $
500 pcs.
112.85325 $
1000 pcs.
106.583625 $
3000 pcs.
100.314 $
10000 pcs.
94.044375 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The BSM600C12P3G201 is a common industry Single FETs, MOSFETs housed in a RoHS compliant Module package by Rohm Semiconductor made. The BSM600C12P3G201 is using SPQ 4 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrRohm Semiconductor
Series-
PackageTray
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C600A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id5.6V @ 182mA
Vgs (Max)+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds28000 pF @ 10 V
FET Feature-
Power Dissipation (Max)2460W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageModule
Package / CaseModule
Base Product NumberBSM600
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 4 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes