MOSFET N-CH 20V 8SOIC | Diodes Incorporated
N-Channel 20 V 12.1A (Ta) 1.4W Surface Mount 8-SO
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Unit Price ($ / pc.)
0.09844 $
*
Available: 1045 pcs.
Next delivery: 20895 pcs.
Available in 9 Weeks
Manufacturer Leadtime: 8 Weeks **
Quantity
Price per unit*
100 pcs.
0.093518 $
500 pcs.
0.088596 $
1000 pcs.
0.083674 $
3000 pcs.
0.078752 $
10000 pcs.
0.07383 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The DMN2009USS-13 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-SOIC (0.154", 3.90mm Width) package by Diodes Incorporated made. The DMN2009USS-13 is using SPQ 2500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Diodes Incorporated |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 12.1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 1706 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | DMN2009 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 2500 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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