IGBT 600V 59A TO3P | Toshiba Semiconductor and Storage
IGBT 600 V 59 A 230 W Through Hole TO-3P(N)
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Unit Price ($ / pc.)
0.805415 $
*
Available: 177 pcs.
Next delivery: 2667 pcs.
Manufacturer Leadtime: 52 Weeks **
Description
The GT30J341,Q is a common industry Single IGBTs housed in a RoHS compliant TO-3P-3, SC-65-3 package by Toshiba Semiconductor and Storage made. The GT30J341,Q is using SPQ 100 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tray |
Product Status | Active |
Voltage - Collector Emitter Breakdown (Max) | 600 V |
Current - Collector (Ic) (Max) | 59 A |
Current - Collector Pulsed (Icm) | 120 A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
Power - Max | 230 W |
Switching Energy | 800μJ (on), 600μJ (off) |
Input Type | Standard |
Td (on/off) @ 25°C | 80ns/280ns |
Test Condition | 300V, 30A, 24Ohm, 15V |
Reverse Recovery Time (trr) | 50 ns |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Supplier Device Package | TO-3P(N) |
Base Product Number | GT30J341 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 100 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |