INSULATED GATE BIPOLAR TRANSISTO | Fairchild Semiconductor
IGBT 600 V 54 A 167 W Through Hole TO-220-3
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Unit Price ($ / pc.)
0.91 $
*
Available: 184 pcs.
Next delivery: 2814 pcs.
Manufacturer Leadtime: **
Description
The HGTP12N60A4D is a common industry Single IGBTs housed in a RoHS compliant TO-220-3 package by Fairchild Semiconductor made. The HGTP12N60A4D is using SPQ 165 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Fairchild Semiconductor |
Series | - |
Package | Bulk |
Product Status | Active |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600 V |
Current - Collector (Ic) (Max) | 54 A |
Current - Collector Pulsed (Icm) | 96 A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A |
Power - Max | 167 W |
Switching Energy | 55μJ (on), 50μJ (off) |
Input Type | Standard |
Gate Charge | 78 nC |
Td (on/off) @ 25°C | 17ns/96ns |
Test Condition | 390V, 12A, 10Ohm, 15V |
Reverse Recovery Time (trr) | 30 ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220-3 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 165 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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HGTP12N60A4D specification