DIODE SIL CARBIDE 650V 4A TO220F | Toshiba Semiconductor and Storage
Diode 650 V 4A Through Hole TO-220F-2L
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Unit Price ($ / pc.)
0.4875 $
*
Available: 171 pcs.
Next delivery: 2541 pcs.
Manufacturer Leadtime: 20 Weeks **
Description
The TRS4A65F,S1Q is a common industry Single Diodes housed in a RoHS compliant TO-220-2 Full Pack package by Toshiba Semiconductor and Storage made. The TRS4A65F,S1Q is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tube |
Product Status | Active |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 4A |
Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 4 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 20 μA @ 650 V |
Capacitance @ Vr, F | 16pF @ 650V, 1MHz |
Mounting Type | Through Hole |
Package / Case | TO-220-2 Full Pack |
Supplier Device Package | TO-220F-2L |
Operating Temperature - Junction | 175°C (Max) |
Base Product Number | TRS4A65 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 50 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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TRS4A65F,S1Q specification