DIODE SIL CARBIDE 650V 4A TO220F | Toshiba Semiconductor and Storage

Diode 650 V 4A Through Hole TO-220F-2L

default L
Images may differ 
Unit Price ($ / pc.)
0.4875 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 20 Weeks **
Quantity
Price per unit*
100 pcs.
0.463125 $
500 pcs.
0.43875 $
1000 pcs.
0.414375 $
3000 pcs.
0.39 $
10000 pcs.
0.365625 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The TRS4A65F,S1Q is a common industry Single Diodes housed in a RoHS compliant TO-220-2 Full Pack package by Toshiba Semiconductor and Storage made. The TRS4A65F,S1Q is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrToshiba Semiconductor and Storage
Series-
PackageTube
Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)4A
Voltage - Forward (Vf) (Max) @ If1.6 V @ 4 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr20 μA @ 650 V
Capacitance @ Vr, F16pF @ 650V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-220-2 Full Pack
Supplier Device PackageTO-220F-2L
Operating Temperature - Junction175°C (Max)
Base Product NumberTRS4A65
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 50 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
Previous
TRS8A65F,S1Q