DIODE SIL CARBIDE 650V 10A 5DFN | WeEn Semiconductors

Diode 650 V 10A Surface Mount 5-DFN (8x8)

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Unit Price ($ / pc.)
$ *
Available: 181 pcs.
Next delivery: 2751 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0 $
500 pcs.
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1000 pcs.
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3000 pcs.
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10000 pcs.
0 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The WNSC10650T6J is a common industry Single Diodes housed in a RoHS compliant 4-VSFN Exposed Pad package by WeEn Semiconductors made. The WNSC10650T6J is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrWeEn Semiconductors
Series-
PackageTape & Reel (TR)
Product StatusObsolete
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)10A
Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr60 μA @ 650 V
Capacitance @ Vr, F328pF @ 1V, 1MHz
Mounting TypeSurface Mount
Package / Case4-VSFN Exposed Pad
Supplier Device Package5-DFN (8x8)
Operating Temperature - Junction175°C (Max)
Base Product NumberWNSC1
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 3000 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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NXPSC12650B6J