DIODE SIL CARBIDE 650V 10A 5DFN | WeEn Semiconductors
Diode 650 V 10A Surface Mount 5-DFN (8x8)
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Available: 181 pcs.
Next delivery: 2751 pcs.
Manufacturer Leadtime: **
Description
The WNSC10650T6J is a common industry Single Diodes housed in a RoHS compliant 4-VSFN Exposed Pad package by WeEn Semiconductors made. The WNSC10650T6J is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | WeEn Semiconductors |
Series | - |
Package | Tape & Reel (TR) |
Product Status | Obsolete |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 10A |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 60 μA @ 650 V |
Capacitance @ Vr, F | 328pF @ 1V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | 4-VSFN Exposed Pad |
Supplier Device Package | 5-DFN (8x8) |
Operating Temperature - Junction | 175°C (Max) |
Base Product Number | WNSC1 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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WNSC10650T6J specification