RF TRANS 2 NPN 12V 7GHZ US6 | Toshiba Semiconductor and Storage
RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6
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Unit Price ($ / pc.)
0.1677 $
*
Available: 480 pcs.
Next delivery: 9030 pcs.
Manufacturer Leadtime: **
Description
The HN3C10FUTE85LF is a common industry Bipolar RF Transistors housed in a RoHS compliant 6-TSSOP, SC-88, SOT-363 package by Toshiba Semiconductor and Storage made. The HN3C10FUTE85LF is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tape & Reel (TR) |
Product Status | Active |
Transistor Type | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 7GHz |
Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
Gain | 11.5dB |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
Current - Collector (Ic) (Max) | 80mA |
Operating Temperature | - |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Base Product Number | HN3C10 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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