RF TRANS 2 NPN 12V 7GHZ US6 | Toshiba Semiconductor and Storage

RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6

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Unit Price ($ / pc.)
0.1677 $ *
Available: 480 pcs.
Next delivery: 9030 pcs.
Available in 4 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.159315 $
500 pcs.
0.15093 $
1000 pcs.
0.142545 $
3000 pcs.
0.13416 $
10000 pcs.
0.125775 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The HN3C10FUTE85LF is a common industry Bipolar RF Transistors housed in a RoHS compliant 6-TSSOP, SC-88, SOT-363 package by Toshiba Semiconductor and Storage made. The HN3C10FUTE85LF is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrToshiba Semiconductor and Storage
Series-
PackageTape & Reel (TR)
Product StatusActive
Transistor Type2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.1dB @ 1GHz
Gain11.5dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 20mA, 10V
Current - Collector (Ic) (Max)80mA
Operating Temperature-
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageUS6
Base Product NumberHN3C10
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 3000 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes