RF MOSFET GAN 48V 6DFN | NXP USA Inc.
RF Mosfet 48 V 40 mA 100MHz ~ 2.69GHz 13.9dB 8W 6-PDFN (7x6.5)
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Unit Price ($ / pc.)
337.5 $
*
Available: 195 pcs.
Next delivery: 3045 pcs.
Manufacturer Leadtime: **
Description
The A3G26D055N-1805 is a common industry RF FETs, MOSFETs housed in a RoHS compliant 6-LDFN Exposed Pad package by NXP USA Inc. made. The A3G26D055N-1805 is using SPQ 1 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | NXP USA Inc. |
Series | - |
Package | Bulk |
Product Status | Active |
Technology | GaN |
Frequency | 100MHz ~ 2.69GHz |
Gain | 13.9dB |
Voltage - Test | 48 V |
Current Rating (Amps) | - |
Noise Figure | - |
Current - Test | 40 mA |
Power - Output | 8W |
Voltage - Rated | 125 V |
Mounting Type | Surface Mount |
Package / Case | 6-LDFN Exposed Pad |
Supplier Device Package | 6-PDFN (7x6.5) |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 1 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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A3G26D055N-1805 datesheet
A3G26D055N-1805 specification
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A3G26D055N-1805 component
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A3G26D055N-1805 packaging