GANFET 2N-CH 120V 3.4A DIE | EPC
Mosfet Array 120V 3.4A Surface Mount Die
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Unit Price ($ / pc.)
0.47187 $
*
Available: 577 pcs.
Next delivery: 11067 pcs.
Manufacturer Leadtime: 16 Weeks **
Description
The EPC2110ENGRT is a common industry FET, MOSFET Arrays housed in a RoHS compliant Die package by EPC made. The EPC2110ENGRT is using SPQ 2500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | EPC |
Series | eGaN |
Package | Tape & Reel (TR) |
Product Status | Active |
Technology | GaNFET (Gallium Nitride) |
Configuration | 2 N-Channel (Dual) Common Source |
FET Feature | - |
Drain to Source Voltage (Vdss) | 120V |
Current - Continuous Drain (Id) @ 25°C | 3.4A |
Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 700μA |
Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V |
Power - Max | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |
Base Product Number | EPC211 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 2500 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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EPC2110ENGRT specification