SMALL SIGNAL BIPOLAR TRANSISTOR | onsemi

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 350 mW Through Hole TO-92 (TO-226)

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Unit Price ($ / pc.)
0.015 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.01425 $
500 pcs.
0.0135 $
1000 pcs.
0.01275 $
3000 pcs.
0.012 $
10000 pcs.
0.01125 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The DTD113E is a common industry Single, Pre-Biased Bipolar Transistors housed in a RoHS compliant TO-226-3, TO-92-3 (TO-226AA) package by onsemi made. The DTD113E is using SPQ 11539 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)1 kOhms
Resistor - Emitter Base (R2)1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
Current - Collector Cutoff (Max)500nA
Power - Max350 mW
Grade-
Qualification-
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92 (TO-226)
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 11539 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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DTC123E