SMALL SIGNAL BIPOLAR TRANSISTOR | onsemi
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 350 mW Through Hole TO-92 (TO-226)
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Unit Price ($ / pc.)
0.015 $
*
Available: 171 pcs.
Next delivery: 2541 pcs.
Manufacturer Leadtime: **
Description
The DTD113E is a common industry Single, Pre-Biased Bipolar Transistors housed in a RoHS compliant TO-226-3, TO-92-3 (TO-226AA) package by onsemi made. The DTD113E is using SPQ 11539 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | onsemi |
Series | - |
Package | Bulk |
Product Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | 50 V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Power - Max | 350 mW |
Grade | - |
Qualification | - |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package | TO-92 (TO-226) |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 11539 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |