TRANS PREBIAS NPN 50V 0.1A VESM | Toshiba Semiconductor and Storage

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM

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Unit Price ($ / pc.)
0.00806 $ *
Available: 830 pcs.
Next delivery: 16380 pcs.
Available in 7 Weeks
Manufacturer Leadtime: 42 Weeks **
Quantity
Price per unit*
100 pcs.
0.007657 $
500 pcs.
0.007254 $
1000 pcs.
0.006851 $
3000 pcs.
0.006448 $
10000 pcs.
0.006045 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The RN1111MFV,L3F is a common industry Single, Pre-Biased Bipolar Transistors housed in a RoHS compliant SOT-723 package by Toshiba Semiconductor and Storage made. The RN1111MFV,L3F is using SPQ 8000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrToshiba Semiconductor and Storage
Series-
PackageTape & Reel (TR)
Product StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Power - Max150 mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM
Base Product NumberRN1111
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 8000 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes