TRANS PREBIAS NPN 50V 0.1A VESM | Toshiba Semiconductor and Storage
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
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Unit Price ($ / pc.)
0.00806 $
*
Available: 830 pcs.
Next delivery: 16380 pcs.
Manufacturer Leadtime: 42 Weeks **
Description
The RN1111MFV,L3F is a common industry Single, Pre-Biased Bipolar Transistors housed in a RoHS compliant SOT-723 package by Toshiba Semiconductor and Storage made. The RN1111MFV,L3F is using SPQ 8000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tape & Reel (TR) |
Product Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | 50 V |
Resistor - Base (R1) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Power - Max | 150 mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VESM |
Base Product Number | RN1111 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 8000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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RN1111MFV,L3F certificate