TRANS 2NPN PREBIAS 0.1W ES6 | Toshiba Semiconductor and Storage
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
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Available: 501 pcs.
Next delivery: 9471 pcs.
Manufacturer Leadtime: **
Description
The RN1967FE(TE85L,F) is a common industry Bipolar Transistor Arrays, Pre-Biased housed in a RoHS compliant SOT-563, SOT-666 package by Toshiba Semiconductor and Storage made. The RN1967FE(TE85L,F) is using SPQ 4000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tape & Reel (TR) |
Product Status | Obsolete |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10kOhms |
Resistor - Emitter Base (R2) | 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Base Product Number | RN1967 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 4000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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